FZ1000R33HE3BPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE 3300V 1000A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2353.91 EUR |
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Technische Details FZ1000R33HE3BPSA1 Infineon Technologies
Description: IGBT MODULE 3300V 1000A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Switch, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 1000 A, Voltage - Collector Emitter Breakdown (Max): 3300 V, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 190 nF @ 25 V.
Weitere Produktangebote FZ1000R33HE3BPSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FZ1000R33HE3BPSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 3.3kV; Ic: 1kA; screw Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Technology: TRENCHSTOP™ Mechanical mounting: screw Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 1kA Pulsed collector current: 2kA Max. off-state voltage: 3.3kV Case: AG-IHVB130-3 |
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