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FZ1200R17HP4B2BOSA2

FZ1200R17HP4B2BOSA2 Infineon Technologies


Infineon-FZ1200R17HP4_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e581ba76b86 Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1200A 7800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 7800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 97 nF @ 25 V
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Technische Details FZ1200R17HP4B2BOSA2 Infineon Technologies

Description: IGBT MOD 1700V 1200A 7800W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1200A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 7800 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 97 nF @ 25 V.