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FZ1200R17KF6CB2NOSA1 Infineon Technologies


9204ds_fz1200r17kf6c_b2_2_1_zh-en.pdffolderiddb3a30433db6f09f013dca0f.pdf Hersteller: Infineon Technologies
Trans IGBT Module N-CH 650V 1.95KA 9600000mW 7-Pin Tray
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Technische Details FZ1200R17KF6CB2NOSA1 Infineon Technologies

Description: IGBT MODULE 1700V 1200A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Switch, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.2kA, NTC Thermistor: No, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 9600 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 79 nF @ 25 V.

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FZ1200R17KF6CB2NOSA1 Hersteller : Infineon Technologies FZ1200R17KF6C_B2_Rev2.1_2013-11-25.pdf Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.2kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 9600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 79 nF @ 25 V
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FZ1200R17KF6CB2NOSA1 Hersteller : Infineon Technologies FZ1200R17KF6C_B2_Rev2.1_2013-11-25.pdf IGBT Modules
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