FZ1200R33KF2CS1NOSA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - FZ1200R33KF2CS1NOSA1 - FZ1200R33KF2C 3300 V, 1200 A SINGLE SWI
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details FZ1200R33KF2CS1NOSA1 ROCHESTER ELECTRONICS
Description: IGBT MODULE 3300V 2000A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1.2kA, NTC Thermistor: No, Part Status: Obsolete, Current - Collector (Ic) (Max): 2000 A, Voltage - Collector Emitter Breakdown (Max): 3300 V, Power - Max: 14500 W, Current - Collector Cutoff (Max): 12 mA, Input Capacitance (Cies) @ Vce: 150 nF @ 25 V.
Weitere Produktangebote FZ1200R33KF2CS1NOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FZ1200R33KF2CS1NOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MODULE 3300V 2000A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1.2kA NTC Thermistor: No Part Status: Obsolete Current - Collector (Ic) (Max): 2000 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 14500 W Current - Collector Cutoff (Max): 12 mA Input Capacitance (Cies) @ Vce: 150 nF @ 25 V |
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