FZ1600R12HP4NPSA1 Infineon Technologies

Description: INSULATED GATE BIPOLAR TRANSISTO, Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 1650 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 2400 A, Part Status: Active, IGBT Type: Trench, Supplier Device Package: AG-IHMB130-2-1, NTC Thermistor: No, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Single Switch, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.