FZ2400R12KE3B9NOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: AG-IHM190-2-1
Part Status: Active
Current - Collector (Ic) (Max): 3200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 170 nF @ 25 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2063.65 EUR |
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Technische Details FZ2400R12KE3B9NOSA1 Infineon Technologies
Description: IGBT MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Switch, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 2.4kA, NTC Thermistor: No, Supplier Device Package: AG-IHM190-2-1, Part Status: Active, Current - Collector (Ic) (Max): 3200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 11500 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 170 nF @ 25 V.