FZ400R12KE3B1HOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 650A 2250W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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Technische Details FZ400R12KE3B1HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 650A 2250W MOD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 650 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 2250 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V.
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FZ400R12KE3B1HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 650A 2250W 5-Pin 62MM-2 Tray |
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| FZ400R12KE3B1HOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; Ic: 400A; 62MM; 2.25kW Type of semiconductor module: IGBT Case: 62MM Gate-emitter voltage: ±20V Collector current: 400A Power dissipation: 2.25kW |
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