Produkte > INFINEON TECHNOLOGIES > FZ400R12KS4HOSA1

FZ400R12KS4HOSA1 Infineon Technologies


Infineon-FZ400R12KS4-DS-v03_04-en_de.pdf?fileId=db3a304412b407950112b4336f045caa
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 510A 2500W MOD
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 510 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2500 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FZ400R12KS4HOSA1 Infineon Technologies

Description: IGBT MOD 1200V 510A 2500W MOD, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 510 A, Part Status: Active, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A, Operating Temperature: -40°C ~ 125°C, Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Input Capacitance (Cies) @ Vce: 26 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 2500 W.

Weitere Produktangebote FZ400R12KS4HOSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
FZ400R12KS4HOSA1 FZ400R12KS4HOSA1 Infineon Technologies Infineon-FZ400R12KS4-DS-v03_04-en_de.pdf?fileId=db3a304412b407950112b4336f045caa IGBT Modules MEDIUM POWER 62MM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KS4HOSA1 INFINEON TECHNOLOGIES FZ400R12KS4.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Power dissipation: 2.5kW
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KS4HOSA1 Infineon-FZ400R12KS4-DS-v03_04-en_de.pdf?fileId=db3a304412b407950112b4336f045caa
Hersteller: Infineon Technologies
IGBT Modules MEDIUM POWER 62MM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KS4HOSA1 FZ400R12KS4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Power dissipation: 2.5kW
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH