G01N20LE Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 200V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.17 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details G01N20LE Goford Semiconductor
Description: MOSFET N-CH ESD 200V 1.7A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V, Power Dissipation (Max): 1.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Weitere Produktangebote G01N20LE
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
G01N20LE | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 200V; 1.7A; 1.5W; SOT23; ESD Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 200V Drain current: 1.7A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Gate charge: 12nC Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| G01N20LE |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 200V; 1.7A; 1.5W; SOT23; ESD
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.7A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 200V; 1.7A; 1.5W; SOT23; ESD
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1.7A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH