G020N03D5

G020N03D5 Goford Semiconductor


G020N03D5.pdf
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,30V,140A,83W,DFN5*6-
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5497 pF @ 15 V
auf Bestellung 100 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
16+1.12 EUR
100+0.74 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details G020N03D5 Goford Semiconductor

Description: MOSFET,N-CH,30V,140A,83W,DFN5*6-, Input Capacitance (Ciss) (Max) @ Vds: 5497 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN (4.9x5.75), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote G020N03D5

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
G020N03D5 G020N03D5 Hersteller : Goford Semiconductor G020N03D5.pdf Description: MOSFET,N-CH,30V,140A,83W,DFN5*6-
Input Capacitance (Ciss) (Max) @ Vds: 5497 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH