G02P06 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
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Technische Details G02P06 Goford Semiconductor
P-Channel Enhancement Mode Power MOSFET.
Weitere Produktangebote G02P06 nach Preis ab 0.044 EUR bis 0.65 EUR
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G02P06 | Hersteller : Goford Semiconductor |
Description: P60V,RD(MAX)<190M@-10V,RD(MAX)<2 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V FET Feature: Standard Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 30 V |
auf Bestellung 6834 Stücke: Lieferzeit 10-14 Tag (e) |
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| G02P06 | Hersteller : GOFORD Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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