G04P10HE Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.23 EUR |
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Technische Details G04P10HE Goford Semiconductor
Description: P-100V,-4A,RD(MAX).
Weitere Produktangebote G04P10HE nach Preis ab 0.38 EUR bis 0.99 EUR
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G04P10HE | Hersteller : Goford Semiconductor |
Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 1.2W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V |
auf Bestellung 14979 Stücke: Lieferzeit 10-14 Tag (e) |
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G04P10HE | Hersteller : Goford Semiconductor |
Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 1.2W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |