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G04P10HE

G04P10HE Goford Semiconductor

GOFORD-G04P10HE.pdf Hersteller: Goford Semiconductor
Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.23 EUR
Mindestbestellmenge: 2500
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Technische Details G04P10HE Goford Semiconductor

P-CH,-100V,-4A,RD(max) Less Than 200mOhm at -10V,RD(max) Less Than 250mOhm at -4.5V,VTH -1.2V to -2.8V, SOT-223.

Weitere Produktangebote G04P10HE nach Preis ab 0.17 EUR bis 0.99 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
G04P10HE G04P10HE Hersteller : Goford Semiconductor GOFORD-G04P10HE.pdf Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V
auf Bestellung 14979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+0.99 EUR
21+ 0.84 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 18
G04P10HE Hersteller : GOFORD Semiconductor GOFORD-G04P10HE.pdf P-CH,-100V,-4A,RD(max) Less Than 200mOhm at -10V,RD(max) Less Than 250mOhm at -4.5V,VTH -1.2V to -2.8V, SOT-223
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.22 EUR
15000+ 0.19 EUR
30000+ 0.17 EUR
Mindestbestellmenge: 2500
G04P10HE G04P10HE Hersteller : Goford Semiconductor GOFORD-G04P10HE.pdf Description: P-100V,-4A,RD(MAX)<200M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1647 pF @ 50 V
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