G050N06LL Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N60V, 5A,RD<45M@10V,VTH1.0V~2.5V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1343 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| 6000+ | 0.18 EUR |
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Technische Details G050N06LL Goford Semiconductor
Description: N60V, 5A,RD.
Weitere Produktangebote G050N06LL nach Preis ab 0.23 EUR bis 0.88 EUR
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G050N06LL | Hersteller : Goford Semiconductor |
Description: N60V, 5A,RD<45M@10V,VTH1.0V~2.5V Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1343 pF @ 30 V |
auf Bestellung 5770 Stücke: Lieferzeit 10-14 Tag (e) |
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