G06N10 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<240M@10V,VTH1.2V~3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.25 EUR |
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Technische Details G06N10 Goford Semiconductor
Description: N100V,RD(MAX).
Weitere Produktangebote G06N10 nach Preis ab 0.28 EUR bis 0.74 EUR
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G06N10 | Hersteller : Goford Semiconductor |
Description: N100V,RD(MAX)<240M@10V,VTH1.2V~3 Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 2102 Stücke: Lieferzeit 10-14 Tag (e) |
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