G06P01E Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1087 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: P-Channel
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
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Technische Details G06P01E Goford Semiconductor
Description: P12V,RD(MAX).
Weitere Produktangebote G06P01E nach Preis ab 0.16 EUR bis 0.62 EUR
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G06P01E | Hersteller : Goford Semiconductor |
Description: P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4 Input Capacitance (Ciss) (Max) @ Vds: 1087 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.8W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 5792 Stücke: Lieferzeit 10-14 Tag (e) |
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