Weitere Produktangebote G070N06TH nach Preis ab 0.51 EUR bis 2.85 EUR
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G070N06TH | Hersteller : Goford Semiconductor |
 Description: MOSFET N-CH 60V 110A 160W 6.4M(Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6512 pF @ 30 V |
auf Bestellung 101 Stücke: Lieferzeit 10-14 Tag (e) |
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| G070N06TH | Hersteller : GOFORD Semiconductor |
G070N06TH |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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G070N06TH | Hersteller : Goford Semiconductor |
Description: MOSFET N-CH 60V 110A 160W 6.4m( Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6512 pF @ 30 V |
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