G080N10T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 180A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13912 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.3 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details G080N10T Goford Semiconductor
Description: MOSFET N-CH 100V 180A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 13912 pF @ 50 V.
Weitere Produktangebote G080N10T nach Preis ab 1.32 EUR bis 1.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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G080N10T | GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 140A; 236W; TO220 Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 236W Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Gate charge: 192nC |
auf Bestellung 564 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
| G080N10T | GOFORD Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G080N10T |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 140A; 236W; TO220
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 236W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 192nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 140A; 236W; TO220
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 236W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 192nC
auf Bestellung 564 Stücke:
Lieferzeit 14-21 Tag (e)
| G080N10T |
|
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 130+ | 1.32 EUR |