G080N10T GOFORD SEMICONDUCTOR
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 140A; 236W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 236W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
Technology: Trench
| Anzahl | Privatkunde |
|---|---|
| 37+ | 2.31 EUR |
| 41+ | 2.09 EUR |
| 100+ | 1.83 EUR |
| 250+ | 1.65 EUR |
| 500+ | 1.59 EUR |
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Technische Details G080N10T GOFORD SEMICONDUCTOR
Description: MOSFET N-CH 100V 180A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 13912 pF @ 50 V.
Weitere Produktangebote G080N10T nach Preis ab 1.36 EUR bis 5.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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G080N10T | Goford Semiconductor |
Description: MOSFET N-CH 100V 180A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13912 pF @ 50 V |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| G080N10T | GOFORD Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G080N10T |
|
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 180A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13912 pF @ 50 V
Description: MOSFET N-CH 100V 180A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13912 pF @ 50 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.3 EUR |
| G080N10T |
|
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 130+ | 1.36 EUR |