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G080N10T

G080N10T Goford Semiconductor

GOFORD-G080N10T.pdf Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 180A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13912 pF @ 50 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+2.96 EUR
10+ 2.46 EUR
Mindestbestellmenge: 6
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Technische Details G080N10T Goford Semiconductor

Description: MOSFET N-CH 100V 180A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 13912 pF @ 50 V.

Weitere Produktangebote G080N10T nach Preis ab 1.2 EUR bis 1.2 EUR

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G080N10T Hersteller : GOFORD Semiconductor GOFORD-G080N10T.pdf N-Channel Enhancement Mode Power MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
130+1.2 EUR
Mindestbestellmenge: 130