G085C03D32 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N/P-CH 30V 28A 8DFN
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 25nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 15V, 1352pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc), 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 13W (Tc), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 24+ | 0.88 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |
| 2000+ | 0.36 EUR |
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Technische Details G085C03D32 Goford Semiconductor
Description: MOSFET N/P-CH 30V 28A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 13W (Tc), 30W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), 12A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 15V, 1352pF @ 15V, Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 25nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-DFN (3.15x3.05).
Weitere Produktangebote G085C03D32
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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G085C03D32 | Goford Semiconductor |
Description: MOSFET N/P-CH 30V 28A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 13W (Tc), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Tc), 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 15V, 1352pF @ 15V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| G085C03D32 |
|
Hersteller: Goford Semiconductor
Description: MOSFET N/P-CH 30V 28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W (Tc), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 15V, 1352pF @ 15V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Description: MOSFET N/P-CH 30V 28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W (Tc), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 15V, 1352pF @ 15V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH