G08P06D3 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 8A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
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Technische Details G08P06D3 Goford Semiconductor
Description: MOSFET P-CH 60V 8A DFN3*3-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN (3.15x3.05), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V.
Weitere Produktangebote G08P06D3 nach Preis ab 0.55 EUR bis 2.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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G08P06D3 | Goford Semiconductor |
Description: P60V,RD(MAX)<52M@-10V,VTH-2V~-3. Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-DFN (3.15x3.05) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 2340 Stücke: Lieferzeit 10-14 Tag (e) |
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| G08P06D3 |
|
Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.09 EUR |
| 17+ | 1.31 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.6 EUR |
| 2000+ | 0.55 EUR |