G09P02L Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<23M@-4.5V,RD(MAX)<3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 2196 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.11 EUR |
| 31+ | 0.68 EUR |
| 100+ | 0.43 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
19 Stücke
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Technische Details G09P02L Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -9A; 2.5W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -9A, Case: SOT23, Gate-source voltage: ±12V, Mounting: SMD, Gate charge: 72nC, Kind of channel: enhancement, Technology: Trench, Power dissipation: 2.5W.
Weitere Produktangebote G09P02L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
G09P02L | GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -9A; 2.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Case: SOT23 Gate-source voltage: ±12V Mounting: SMD Gate charge: 72nC Kind of channel: enhancement Technology: Trench Power dissipation: 2.5W |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| G09P02L |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -9A; 2.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 2.5W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -9A; 2.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 2.5W
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)