G1002 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
Power Dissipation (Max): 1.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.074 EUR |
| 15000+ | 0.068 EUR |
| 30000+ | 0.062 EUR |
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Technische Details G1002 Goford Semiconductor
Description: MOSFET N-CH 100V 2A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V, Power Dissipation (Max): 1.3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 50 V.
Weitere Produktangebote G1002 nach Preis ab 0.14 EUR bis 0.48 EUR
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G1002 | Goford Semiconductor |
Description: MOSFET N-CH 100V 2A 1.3W SOT-23 Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.3W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| G1002 |
04+ SOP |
auf Bestellung 278 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| G1002 |
|
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 2A 1.3W SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 2A 1.3W SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 0.48 EUR |
| 66+ | 0.32 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| G1002 |
|
04+ SOP
auf Bestellung 278 Stücke:
Lieferzeit 21-28 Tag (e)