G1003A Goford Semiconductor

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Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<210M@10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 3A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 25 V

auf Bestellung 180000 Stücke:

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Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
3000+	0.15 EUR
15000+	0.14 EUR
30000+	0.12 EUR
51000+	0.11 EUR

Mindestbestellmenge: 3000

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Technische Details G1003A Goford Semiconductor

Weitere Produktangebote G1003A nach Preis ab 0.27 EUR bis 0.86 EUR

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit entfalten einschränken alle	Preis ohne MwSt
	G1003A	Hersteller : Goford Semiconductor	Description: N100V,RD(MAX)<210M@10V,RD(MAX)<2 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 3A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 25 V	auf Bestellung 182322 Stücke: Lieferzeit 10-14 Tag (e)	Anzahl Preis ohne MwSt 21+ 0.86 EUR 26+  0.7 EUR 100+  0.48 EUR 500+  0.36 EUR 1000+  0.27 EUR Mindestbestellmenge: 21 kaufen
	G1003A	Hersteller : Goford Semiconductor	Description: N100V,RD(MAX)<210M@10V,RD(MAX)<2 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 3A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 25 V	Produkt ist nicht verfügbar	kaufen