G1003B Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<170M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V
| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 38+ | 0.47 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.18 EUR |
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Technische Details G1003B Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 3A; 1.5W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3A, Power dissipation: 1.5W, Case: SOT23, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 30nC, Kind of channel: enhancement, Technology: Trench.
Weitere Produktangebote G1003B nach Preis ab 0.1 EUR bis 0.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| G1003B | Hersteller : GOFORD Semiconductor |
N-CH 100V 5A 170mOhm/MAX at 10V, 180mOhm/MAX at 4.5V SOT-23 |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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G1003B | Hersteller : Goford Semiconductor |
Description: N100V,RD(MAX)<170M@10V,RD(MAX)<1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Power Dissipation (Max): 3.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 50 V |
Produkt ist nicht verfügbar |
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| G1003B | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 3A; 1.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Gate charge: 30nC Kind of channel: enhancement Technology: Trench |
Produkt ist nicht verfügbar |