G1006LE Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N100V,RD(MAX)<150M@10V,RD(MAX)<1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
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Technische Details G1006LE Goford Semiconductor
Description: N100V,RD(MAX).
Weitere Produktangebote G1006LE nach Preis ab 0.092 EUR bis 0.76 EUR
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G1006LE | Hersteller : Goford Semiconductor |
Description: N100V,RD(MAX)<150M@10V,RD(MAX)<1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 3A, 10V FET Feature: Standard Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 50 V |
auf Bestellung 7277 Stücke: Lieferzeit 10-14 Tag (e) |
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| G1006LE | Hersteller : GOFORD Semiconductor |
N-Channel Trench MOSFET |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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