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Technische Details G1007 DMC Tools
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 7A; 28W; SOP8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 7A, Power dissipation: 28W, Case: SOP8, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 11nC, Kind of channel: enhancement, Technology: Trench.
Weitere Produktangebote G1007
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| G1007 | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 7A; 28W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7A Power dissipation: 28W Case: SOP8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 11nC Kind of channel: enhancement Technology: Trench |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| G1007 |
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 7A; 28W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7A
Power dissipation: 28W
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Technology: Trench
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 7A; 28W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7A
Power dissipation: 28W
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Technology: Trench
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH