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Technische Details G1007 DMC Tools
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 7A; 28W; SOP8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 7A, Power dissipation: 28W, Case: SOP8, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 11nC, Kind of channel: enhancement, Technology: Trench.
Weitere Produktangebote G1007
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| G1007 | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 7A; 28W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7A Power dissipation: 28W Case: SOP8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 11nC Kind of channel: enhancement Technology: Trench |
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