G1008B

G1008B Goford Semiconductor


products-detail.php?ProId=406 Hersteller: Goford Semiconductor
Description: MOSFET 100V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.31 EUR
16000+ 0.28 EUR
Mindestbestellmenge: 4000
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Produktbewertung abgeben

Technische Details G1008B Goford Semiconductor

Description: MOSFET 100V 8A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V, Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOP.

Weitere Produktangebote G1008B nach Preis ab 0.27 EUR bis 0.92 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
G1008B G1008B Hersteller : Goford Semiconductor products-detail.php?ProId=406 Description: MOSFET 100V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
23+ 0.79 EUR
100+ 0.55 EUR
500+ 0.46 EUR
1000+ 0.39 EUR
2000+ 0.35 EUR
Mindestbestellmenge: 20
G1008B Hersteller : GOFORD Semiconductor products-detail.php?ProId=406 N-CH,100V,8A,RD(max) Less Than 130mOhm at 10V,RD(max) Less Than 145mOhm at 4.5V,VTH 1.0V to 3.0V, SOP-8
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4000+0.3 EUR
16000+ 0.27 EUR
Mindestbestellmenge: 4000
G1008B G1008B Hersteller : Goford Semiconductor products-detail.php?ProId=406 Description: MOSFET 100V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
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