G100N03D5 Goford Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.68 EUR |
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Technische Details G100N03D5 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 100A; 50W; DFN5x6-8, Type of transistor: N-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 100A, Power dissipation: 50W, Case: DFN5x6-8, Gate-source voltage: ±20V, Mounting: SMD, Kind of channel: enhancement, Gate charge: 38nC.
Weitere Produktangebote G100N03D5 nach Preis ab 0.65 EUR bis 3.33 EUR
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G100N03D5 | Goford Semiconductor |
 Description: N-CH, 30V, 100A, RD(MAX)<3.5M@10Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5595 pF @ 50 V |
auf Bestellung 4875 Stücke: Lieferzeit 10-14 Tag (e) |
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| G100N03D5 | GOFORD Semiconductor |
N-CH,30V,100A,RD(max) Less Than 3.5mOhm at 10V,RD(max) Less Than 4.5mOhm at 5V,VTH 1.2V to 2.5V, DFN5X6-8L |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G100N03D5 | GOFORD Semiconductor |
N-CH,30V,100A,RD(max) Less Than 3.5mOhm at 10V,RD(max) Less Than 4.5mOhm at 5V,VTH 1.2V to 2.5V, DFN5X6-8L |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G100N03D5 |
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Hersteller: Goford Semiconductor
Description: N-CH, 30V, 100A, RD(MAX)<3.5M@10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5595 pF @ 50 V
Description: N-CH, 30V, 100A, RD(MAX)<3.5M@10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5595 pF @ 50 V
auf Bestellung 4875 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.33 EUR |
| 10+ | 2.12 EUR |
| 50+ | 1.58 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.12 EUR |
| G100N03D5 |
|
Hersteller: GOFORD Semiconductor
N-CH,30V,100A,RD(max) Less Than 3.5mOhm at 10V,RD(max) Less Than 4.5mOhm at 5V,VTH 1.2V to 2.5V, DFN5X6-8L
N-CH,30V,100A,RD(max) Less Than 3.5mOhm at 10V,RD(max) Less Than 4.5mOhm at 5V,VTH 1.2V to 2.5V, DFN5X6-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.65 EUR |
| G100N03D5 |
|
Hersteller: GOFORD Semiconductor
N-CH,30V,100A,RD(max) Less Than 3.5mOhm at 10V,RD(max) Less Than 4.5mOhm at 5V,VTH 1.2V to 2.5V, DFN5X6-8L
N-CH,30V,100A,RD(max) Less Than 3.5mOhm at 10V,RD(max) Less Than 4.5mOhm at 5V,VTH 1.2V to 2.5V, DFN5X6-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.65 EUR |