G10N03S Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 10A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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Technische Details G10N03S Goford Semiconductor
Description: MOSFET N-CH 30V 10A SOP-8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 6A, 10V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Weitere Produktangebote G10N03S nach Preis ab 0.31 EUR bis 1.26 EUR
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G10N03S | Goford Semiconductor |
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<16M |
auf Bestellung 3495 Stücke: Lieferzeit 10-14 Tag (e) |
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| G10N03S |
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Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<16M
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<16M
auf Bestellung 3495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.26 EUR |
| 27+ | 0.77 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |
| 2000+ | 0.31 EUR |