G10N10A Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 10A TO-252
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.2 EUR |
| 15000+ | 0.19 EUR |
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Technische Details G10N10A Goford Semiconductor
Description: N100V,RD(MAX)130MOHM@10V,TO-252, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 28W (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Weitere Produktangebote G10N10A nach Preis ab 0.34 EUR bis 1.39 EUR
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G10N10A | Hersteller : Goford Semiconductor |
Description: N100V,RD(MAX)130MOHM@10V,TO-252 Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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G10N10A | Hersteller : Goford Semiconductor |
Description: N100V,RD(MAX)130MOHM@10V,TO-252 Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 1727 Stücke: Lieferzeit 10-14 Tag (e) |
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| G10N10A | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 10A; 28W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 28W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Gate charge: 15.5nC Kind of channel: enhancement Technology: Trench |
Produkt ist nicht verfügbar |