
G10P03 Goford Semiconductor

Description: MOSFET P-CH 30V 10A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 4.5V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5000+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details G10P03 Goford Semiconductor
Description: MOSFET P-CH 30V 10A DFN3*3-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 4.5V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-DFN (3.15x3.05), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V.
Weitere Produktangebote G10P03 nach Preis ab 0.16 EUR bis 1.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
G10P03 | Hersteller : Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Power Dissipation (Max): 21.9W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2067 pF @ 15 V Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
auf Bestellung 4127 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
G10P03 | Hersteller : GOFORD Semiconductor |
![]() |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
![]() |
G10P03 | Hersteller : Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Power Dissipation (Max): 21.9W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2067 pF @ 15 V Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Produkt ist nicht verfügbar |