G110N06K Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 110A TO-252
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.55 EUR |
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Technische Details G110N06K Goford Semiconductor
Description: MOSFET N-CH 60V 110A TO-252, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 160W (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote G110N06K nach Preis ab 0.56 EUR bis 3.04 EUR
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G110N06K | Hersteller : Goford Semiconductor |
Description: N60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Input Capacitance (Ciss) (Max) @ Vds: 5538 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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G110N06K | Hersteller : Goford Semiconductor |
Description: N60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5538 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Drain to Source Voltage (Vdss): 60 V |
auf Bestellung 1329 Stücke: Lieferzeit 10-14 Tag (e) |
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| G110N06K | Hersteller : GOFORD Semiconductor |
N-CH,60V,110A,RD(max) Less Than 6.4mOhm at 10V,RD(max) Less Than 8.4mOhm at 4.5V,VTH 1.0V to 2.5V, TO-252 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G110N06K | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 110A; 160W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 160W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Gate charge: 122nC Kind of channel: enhancement Technology: Trench |
Produkt ist nicht verfügbar |