G110N06K Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Input Capacitance (Ciss) (Max) @ Vds: 5538 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.9 EUR |
| 5000+ | 0.84 EUR |
| 7500+ | 0.81 EUR |
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Technische Details G110N06K Goford Semiconductor
N-CH,60V,110A,RD(max) Less Than 6.4mOhm at 10V,RD(max) Less Than 8.4mOhm at 4.5V,VTH 1.0V to 2.5V, TO-252.
Weitere Produktangebote G110N06K nach Preis ab 0.67 EUR bis 3.31 EUR
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G110N06K | Goford Semiconductor |
Description: N60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5538 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Drain to Source Voltage (Vdss): 60 V |
auf Bestellung 719 Stücke: Lieferzeit 10-14 Tag (e) |
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| G110N06K | GOFORD Semiconductor |
N-CH,60V,110A,RD(max) Less Than 6.4mOhm at 10V,RD(max) Less Than 8.4mOhm at 4.5V,VTH 1.0V to 2.5V, TO-252 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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