G110N06T Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 60V 110A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Supplier Device Package: TO-220
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.09 EUR |
| 9000+ | 1.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details G110N06T Goford Semiconductor
Description: MOSFET N-CH 60V 110A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Supplier Device Package: TO-220, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Weitere Produktangebote G110N06T nach Preis ab 0.95 EUR bis 0.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| G110N06T | Hersteller : GOFORD Semiconductor |
N-CH,60V,110A,RD(max) Less Than 6.4mOhm at 10V,RD(max) Less Than 8.4mOhm at 4.5V,VTH 1.0V to 2.5V, TO-220er MOSFET |
auf Bestellung 12900 Stücke: Lieferzeit 14-21 Tag (e) |
|