G110N06T Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6512 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 6+ | 3.34 EUR |
| 10+ | 2.15 EUR |
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Technische Details G110N06T Goford Semiconductor
Description: MOSFET N-CH 60V 110A TO-220, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 160W (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Supplier Device Package: TO-220, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote G110N06T
| Foto | Bezeichnung | Hersteller | Beschreibung |
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G110N06T | Hersteller : Goford Semiconductor |
Description: MOSFET N-CH 60V 110A TO-220 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: TO-220 Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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| G110N06T | Hersteller : GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 110A; 160W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 160W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 122nC Kind of channel: enhancement Technology: Trench |
Produkt ist nicht verfügbar |