G11S Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 20V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 1A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2455 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.19 EUR |
| 16000+ | 0.18 EUR |
| 32000+ | 0.17 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details G11S Goford Semiconductor
Description: MOSFET P-CH 20V 11A SOP-8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 18.4mOhm @ 1A, 4.5V, Power Dissipation (Max): 3.3W (Tc), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2455 pF @ 10 V.
Weitere Produktangebote G11S nach Preis ab 0.14 EUR bis 0.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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G11S | GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -11A; 3.3W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -11A Power dissipation: 3.3W Case: SOP8 Gate-source voltage: ±12V Mounting: SMD Gate charge: 47nC Kind of channel: enhancement Technology: Trench |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| G11S | GOFORD Semiconductor |
P-CH,-20V,-11A,RD(max) Less Than 18.4mOhm at -4.5V,RD(max) Less Than 24.5mOhm at -2.5V,VTH -0.5V to -1.1V ,SOP-8 |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| G11S |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -11A; 3.3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 3.3W
Case: SOP8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 47nC
Kind of channel: enhancement
Technology: Trench
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -11A; 3.3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Power dissipation: 3.3W
Case: SOP8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 47nC
Kind of channel: enhancement
Technology: Trench
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| G11S |
|
Hersteller: GOFORD Semiconductor
P-CH,-20V,-11A,RD(max) Less Than 18.4mOhm at -4.5V,RD(max) Less Than 24.5mOhm at -2.5V,VTH -0.5V to -1.1V ,SOP-8
P-CH,-20V,-11A,RD(max) Less Than 18.4mOhm at -4.5V,RD(max) Less Than 24.5mOhm at -2.5V,VTH -0.5V to -1.1V ,SOP-8
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.18 EUR |
| 16000+ | 0.17 EUR |
| 32000+ | 0.14 EUR |