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G120N03D32

G120N03D32 Goford Semiconductor

G120N03D32.pdf Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 30V 28A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
24+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
2000+0.3 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G120N03D32 Goford Semiconductor

Description: MOSFET 2N-CH 30V 28A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V, Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (3.15x3.05).

Weitere Produktangebote G120N03D32 nach Preis ab 0.21 EUR bis 0.21 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
G120N03D32 Hersteller : GOFORD Semiconductor G120N03D32.pdf G120N03D32
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.21 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G120N03D32 G120N03D32 Hersteller : Goford Semiconductor G120N03D32.pdf Description: MOSFET 2N-CH 30V 28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH