G120P03S2 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET 30V 16A 8SOP
Technology: MOSFET (Metal Oxide)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
| Anzahl | Preis |
|---|---|
| 4000+ | 0.45 EUR |
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Technische Details G120P03S2 Goford Semiconductor
Description: MOSFET 30V 16A 8SOP, Technology: MOSFET (Metal Oxide), Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V, Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.4W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Active.
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G120P03S2 | Hersteller : Goford Semiconductor |
Description: MOSFET 30V 16A 8SOP Technology: MOSFET (Metal Oxide) Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
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