Technische Details G120P06T Goford Semiconductor
Category: THT P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -120A; 277W; TO220, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -120A, Power dissipation: 277W, Case: TO220, Gate-source voltage: ±20V, Mounting: THT, Gate charge: 230nC, Kind of channel: enhancement, Technology: Trench.
Weitere Produktangebote G120P06T nach Preis ab 0.81 EUR bis 0.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| G120P06T | GOFORD Semiconductor |
 P-CH,-60V,-120A,RD(max) Less Than 8.5mOhm at -10V,VTH -1.0V to -3.0V, TO-220 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G120P06T |
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Hersteller: GOFORD Semiconductor
P-CH,-60V,-120A,RD(max) Less Than 8.5mOhm at -10V,VTH -1.0V to -3.0V, TO-220
P-CH,-60V,-120A,RD(max) Less Than 8.5mOhm at -10V,VTH -1.0V to -3.0V, TO-220
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.81 EUR |