G12P03D3 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.23 EUR |
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Technische Details G12P03D3 Goford Semiconductor
Description: P30V,RD(MAX).
Weitere Produktangebote G12P03D3 nach Preis ab 0.26 EUR bis 1.06 EUR
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G12P03D3 | Hersteller : Goford Semiconductor |
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<26 Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN (3.15x3.05) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 2175 Stücke: Lieferzeit 10-14 Tag (e) |
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