G12P03D3 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.31 EUR |
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Technische Details G12P03D3 Goford Semiconductor
P-CH -30V -12A 20mOhm/MAX at -10V, 26mOhm/MAX at -4.5V, DFN3x3-8L.
Weitere Produktangebote G12P03D3 nach Preis ab 0.13 EUR bis 1.14 EUR
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G12P03D3 | Hersteller : Goford Semiconductor |
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<26 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 15 V |
auf Bestellung 2449 Stücke: Lieferzeit 10-14 Tag (e) |
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| G12P03D3 | Hersteller : GOFORD Semiconductor |
P-CH -30V -12A 20mOhm/MAX at -10V, 26mOhm/MAX at -4.5V, DFN3x3-8L |
auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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