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G12P03D3

G12P03D3 Goford Semiconductor

G12P03D3.pdf Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 12A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.15 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G12P03D3 Goford Semiconductor

Description: MOSFET P-CH 30V 12A DFN3*3-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-DFN (3.15x3.05), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.

Weitere Produktangebote G12P03D3 nach Preis ab 0.14 EUR bis 1.32 EUR

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G12P03D3 G12P03D3 Hersteller : Goford Semiconductor G12P03D3.pdf Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.3 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G12P03D3 G12P03D3 Hersteller : Goford Semiconductor G12P03D3.pdf Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 15 V
auf Bestellung 2433 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
22+0.82 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.37 EUR
2000+0.34 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
G12P03D3 Hersteller : GOFORD Semiconductor G12P03D3.pdf P-CH -30V -12A 20mOhm/MAX at -10V, 26mOhm/MAX at -4.5V, DFN3x3-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.14 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH