G130N06M Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N60V, 90A,RD<12M@10V,VTH1.0V~2.4
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2867 pF @ 30 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.52 EUR |
| 12+ | 1.6 EUR |
| 100+ | 1.07 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details G130N06M Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 90A; 85W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 90A, Power dissipation: 85W, Case: TO263, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 36.6nC, Kind of channel: enhancement, Technology: Trench.
Weitere Produktangebote G130N06M nach Preis ab 0.36 EUR bis 0.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| G130N06M | Hersteller : GOFORD Semiconductor |
N-CH,60V,90A,RD(max) Less Than 12mOhm at 10V,RD(max) Less Than 14mOhm at 4.5V,VTH 1V to 2.4V, TO-263 |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||
|
|
G130N06M | Hersteller : Goford Semiconductor |
Description: N60V, 90A,RD<12M@10V,VTH1.0V~2.4 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2867 pF @ 30 V |
Produkt ist nicht verfügbar |
|||||
| G130N06M | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 90A; 85W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 85W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Gate charge: 36.6nC Kind of channel: enhancement Technology: Trench |
Produkt ist nicht verfügbar |