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G130N06S2

G130N06S2 Goford Semiconductor

G130N06S2.pdf Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.6 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G130N06S2 Goford Semiconductor

Description: MOSFET 2N-CH 60V 9A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.6W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V, Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active.

Weitere Produktangebote G130N06S2 nach Preis ab 0.66 EUR bis 2.41 EUR

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G130N06S2 G130N06S2 Hersteller : Goford Semiconductor G130N06S2.pdf Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
12+1.51 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.72 EUR
2000+0.66 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
G130N06S2 G130N06S2 Hersteller : Goford Semiconductor G130N06S2.pdf Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
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Im Einkaufswagen  Stück im Wert von  UAH