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G15N10C

G15N10C Goford Semiconductor

G15N10C.pdf
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<110M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 50 V
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21+1 EUR
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500+0.5 EUR
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Technische Details G15N10C Goford Semiconductor

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 22A; 55W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 22A, Power dissipation: 55W, Case: TO252, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 22nC, Kind of channel: enhancement, Technology: Trench.

Weitere Produktangebote G15N10C

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
G15N10C G15N10C Goford Semiconductor G15N10C.pdf Description: N100V,RD(MAX)<110M@10V,RD(MAX)<1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G15N10C G15N10C GOFORD SEMICONDUCTOR G15N10C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 22A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
Technology: Trench
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G15N10C G15N10C.pdf
G15N10C
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<110M@10V,RD(MAX)<1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G15N10C G15N10C.pdf
G15N10C
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 22A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
Technology: Trench
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH