G15N10C Goford Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.25 EUR |
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Technische Details G15N10C Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 22A; 55W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 22A, Power dissipation: 55W, Case: TO252, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 22nC, Kind of channel: enhancement, Technology: Trench.
Weitere Produktangebote G15N10C nach Preis ab 0.19 EUR bis 1.62 EUR
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G15N10C | Goford Semiconductor |
 Description: N100V,RD(MAX)<110M@10V,RD(MAX)<1Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 50 V |
auf Bestellung 789 Stücke: Lieferzeit 10-14 Tag (e) |
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| G15N10C | GOFORD Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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| G15N10C |
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Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<110M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 50 V
Description: N100V,RD(MAX)<110M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 50 V
auf Bestellung 789 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.62 EUR |
| 21+ | 1.01 EUR |
| 50+ | 0.74 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.5 EUR |
| G15N10C |
|
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.24 EUR |
| 15000+ | 0.21 EUR |
| 30000+ | 0.19 EUR |