G15N10C Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 100V 22A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.22 EUR |
| 15000+ | 0.20 EUR |
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Technische Details G15N10C Goford Semiconductor
Description: MOSFET N-CH 100V 22A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Weitere Produktangebote G15N10C nach Preis ab 0.16 EUR bis 0.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| G15N10C | Hersteller : GOFORD Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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