G160N04K Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 25A TO-252
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.2 EUR |
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Technische Details G160N04K Goford Semiconductor
Description: MOSFET N-CH 40V 25A TO-252, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 43W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote G160N04K nach Preis ab 0.32 EUR bis 1.16 EUR
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G160N04K | Hersteller : Goford Semiconductor |
Description: N40V, 25A,RD<15M@10V,VTH1.0V~2.0 Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1922 Stücke: Lieferzeit 10-14 Tag (e) |
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G160N04K | Hersteller : Goford Semiconductor |
Description: N40V, 25A,RD<15M@10V,VTH1.0V~2.0 Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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| G160N04K | Hersteller : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 25A; 43W; TO252 Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 25A Power dissipation: 43W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Gate charge: 20nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |