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G16P03S

G16P03S Goford Semiconductor

G16P03S.pdf Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 16A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.27 EUR
16000+0.25 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G16P03S Goford Semiconductor

Description: MOSFET P-CH 30V 16A SOP-8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.

Weitere Produktangebote G16P03S nach Preis ab 0.2 EUR bis 1.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
G16P03S G16P03S Hersteller : Goford Semiconductor G16P03S.pdf Description: P30V,RD(MAX)<12M@-10V,RD(MAX)<18
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 2234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
22+0.82 EUR
100+0.56 EUR
500+0.45 EUR
1000+0.41 EUR
2000+0.37 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
G16P03S Hersteller : GOFORD Semiconductor G16P03S.pdf P-CH -30V -16A 12mOhm MAX at -10V, 18mOhm MAX at -4.5V, SOP-8
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.24 EUR
16000+0.22 EUR
32000+0.2 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
G16P03S G16P03S Hersteller : Goford Semiconductor G16P03S.pdf Description: P30V,RD(MAX)<12M@-10V,RD(MAX)<18
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
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Im Einkaufswagen  Stück im Wert von  UAH