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G170P02D32

G170P02D32 Goford Semiconductor

G170P02D32.pdf Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 20V 20A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2193pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05) Dual
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Lieferzeit 10-14 Tag (e)
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24+0.75 EUR
100+0.52 EUR
500+0.41 EUR
1000+0.37 EUR
2000+0.34 EUR
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Technische Details G170P02D32 Goford Semiconductor

Description: MOSFET 2P-CH 20V 20A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 15W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2193pF @ 10V, Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-DFN (3.15x3.05) Dual.

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G170P02D32 G170P02D32 Hersteller : Goford Semiconductor G170P02D32.pdf Description: MOSFET 2P-CH 20V 20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2193pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05) Dual
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Im Einkaufswagen  Stück im Wert von  UAH