G170P03D3 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P-30V, -20A,RD<18M@-10V,VTH-1V~-
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.52 EUR |
| 23+ | 0.95 EUR |
| 50+ | 0.69 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.46 EUR |
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Technische Details G170P03D3 Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -30A; 35W; DFN3x3-8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -30A, Power dissipation: 35W, Case: DFN3x3-8, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 35nC, Kind of channel: enhancement, Technology: Trench.
Weitere Produktangebote G170P03D3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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G170P03D3 | Goford Semiconductor |
Description: P-30V, -20A,RD<18M@-10V,VTH-1V~- Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN (3.15x3.05) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| G170P03D3 | GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -30A; 35W; DFN3x3-8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -30A Power dissipation: 35W Case: DFN3x3-8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 35nC Kind of channel: enhancement Technology: Trench |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| G170P03D3 |
|
Hersteller: Goford Semiconductor
Description: P-30V, -20A,RD<18M@-10V,VTH-1V~-
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: P-30V, -20A,RD<18M@-10V,VTH-1V~-
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G170P03D3 |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -30A; 35W; DFN3x3-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Power dissipation: 35W
Case: DFN3x3-8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Technology: Trench
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -30A; 35W; DFN3x3-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Power dissipation: 35W
Case: DFN3x3-8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Technology: Trench
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH