G180C06Y Goford Semiconductor


G180C06Y.pdf
Hersteller: Goford Semiconductor
Description: MOSFET N+P-CH 60V 50A/-60A TO-25
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 2429pF @ 30V, 4471pF @ -30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, 23mOhm @ -10A, -10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V, 62nC @ -4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA, 4V @ 250µA
Supplier Device Package: TO-252-4
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.56 EUR
Mindestbestellmenge: 2500 Stücke
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Lieferzeit: 10-14 Tag (e)
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Technische Details G180C06Y Goford Semiconductor

Description: MOSFET N/P-CH 60V 50A TO252-4, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 69W (Tc), 115W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2429pF @ 30V, 4471pF @ 30V, Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V, 62nC @ 4.5V, Vgs(th) (Max) @ Id: 2V @ 250µA, 4V @ 250µA, Supplier Device Package: TO-252-4.

Weitere Produktangebote G180C06Y nach Preis ab 0.55 EUR bis 2.84 EUR

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G180C06Y G180C06Y Goford Semiconductor G180C06Y.pdf Description: MOSFET N/P-CH 60V 50A TO252-4
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 69W (Tc), 115W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2429pF @ 30V, 4471pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V, 62nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA, 4V @ 250µA
Supplier Device Package: TO-252-4
auf Bestellung 1902 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.84 EUR
12+1.8 EUR
50+1.34 EUR
100+1.19 EUR
500+0.94 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G180C06Y GOFORD Semiconductor G180C06Y.pdf G180C06Y
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.55 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G180C06Y G180C06Y.pdf
Hersteller: Goford Semiconductor
Description: MOSFET N/P-CH 60V 50A TO252-4
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 69W (Tc), 115W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2429pF @ 30V, 4471pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V, 62nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA, 4V @ 250µA
Supplier Device Package: TO-252-4
auf Bestellung 1902 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.84 EUR
12+1.8 EUR
50+1.34 EUR
100+1.19 EUR
500+0.94 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G180C06Y G180C06Y.pdf
Hersteller: GOFORD Semiconductor
G180C06Y
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+0.55 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH