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G18NP06Y

G18NP06Y Goford Semiconductor

G18NP06Y.pdf Hersteller: Goford Semiconductor
Description: MOSFET N/P-CH 60V 18A TO252-4
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
16+1.13 EUR
100+0.78 EUR
500+0.63 EUR
1000+0.57 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details G18NP06Y Goford Semiconductor

Description: MOSFET N/P-CH 60V 18A TO252-4, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 45W (Tc), 50W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1446pF @ 30V, 2696pF @ 30V, Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA, Supplier Device Package: TO-252-4.

Weitere Produktangebote G18NP06Y nach Preis ab 0.36 EUR bis 0.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
G18NP06Y Hersteller : GOFORD Semiconductor G18NP06Y.pdf N-P-CH,60V/-60V,18A/-18A,RD(max) Less Than 35mOhm at 10V/45mOhm at -10V,VTH 1.0V to 2.5V/-1.5V-3.5V, SOP-8
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.36 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
G18NP06Y Hersteller : Goford Semiconductor G18NP06Y.pdf Description: MOSFET N/P-CH 60V 18A TO252-4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1446pF @ 30V, 2696pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.41 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
G18NP06Y G18NP06Y Hersteller : Goford Semiconductor G18NP06Y.pdf Description: MOSFET N/P-CH 60V 18A TO252-4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
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Im Einkaufswagen  Stück im Wert von  UAH