G1K1P06HH Goford Semiconductor
Hersteller: Goford Semiconductor
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 40+ | 0.52 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.2 EUR |
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Technische Details G1K1P06HH Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -4.5A; 3.1W; SOT223, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -4.5A, Power dissipation: 3.1W, Case: SOT223, Gate-source voltage: ±20V, Mounting: SMD, Gate charge: 11nC, Kind of channel: enhancement, Technology: Trench.
Weitere Produktangebote G1K1P06HH
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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G1K1P06HH | Goford Semiconductor |
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| G1K1P06HH | GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -4.5A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.5A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Gate charge: 11nC Kind of channel: enhancement Technology: Trench |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| G1K1P06HH |
|
Hersteller: Goford Semiconductor
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| G1K1P06HH |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -4.5A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.5A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Technology: Trench
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -4.5A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.5A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Technology: Trench
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH