G1K1P06HH Goford Semiconductor
Hersteller: Goford SemiconductorDescription: P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V
auf Bestellung 4550 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 0.56 EUR |
| 40+ | 0.44 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.17 EUR |
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Technische Details G1K1P06HH Goford Semiconductor
P-60V,-4.5A,RD(max) Less Than 110mOhm at -10V,VTH -2V to -4V, SOT-223.
Weitere Produktangebote G1K1P06HH nach Preis ab 0.13 EUR bis 0.13 EUR
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| G1K1P06HH | Hersteller : GOFORD Semiconductor |
P-60V,-4.5A,RD(max) Less Than 110mOhm at -10V,VTH -2V to -4V, SOT-223 |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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G1K1P06HH | Hersteller : Goford Semiconductor |
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V |
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