G1K1P06LH Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET P-CH 60V 4.5A 3.1W SOT-2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ -3A,- 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
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Technische Details G1K1P06LH Goford Semiconductor
Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ -3A,- 10V, Power Dissipation (Max): 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V.
Weitere Produktangebote G1K1P06LH nach Preis ab 0.065 EUR bis 0.073 EUR
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| G1K1P06LH | Hersteller : GOFORD Semiconductor |
G1K1P06LH |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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G1K1P06LH | Hersteller : Goford Semiconductor |
Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ -3A,- 10V Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V |
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