G1K1P06LL Goford Semiconductor
Hersteller: Goford SemiconductorDescription: P-60V,-4A,RD(MAX)<110M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
auf Bestellung 1856 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 0.63 EUR |
| 39+ | 0.45 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.16 EUR |
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Technische Details G1K1P06LL Goford Semiconductor
P-60V,-3A,RD(max) Less Than 110mOhm at -10V,RD(max) Less Than 130mOhm at -4.5V,VTH -1.0V to -2.5V, SOT-23-6L.
Weitere Produktangebote G1K1P06LL nach Preis ab 0.097 EUR bis 0.097 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| G1K1P06LL | Hersteller : GOFORD Semiconductor |
P-60V,-3A,RD(max) Less Than 110mOhm at -10V,RD(max) Less Than 130mOhm at -4.5V,VTH -1.0V to -2.5V, SOT-23-6L |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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G1K1P06LL | Hersteller : Goford Semiconductor |
Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH- Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V |
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