G1K2C10S2 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET 100V 3A/3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.4 EUR |
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Technische Details G1K2C10S2 Goford Semiconductor
Description: MOSFET 100V 3A/3.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Tc), 3.1W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V, Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP.
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G1K2C10S2 | Hersteller : Goford Semiconductor |
Description: MOSFET 100V 3A/3.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc), 3.1W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP |
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